| 摘要 |
PROBLEM TO BE SOLVED: To stabilize connection resistance in a semiconductor device having stacked contact plug structure. SOLUTION: A first interlayer insulating film 2 is stacked on a semiconductor substrate 1 having an impurity diffused region 1a which is to become the source/ drain region and the like of a transistor. A first embedded plug 3 thinner than the first interlayer insulating film 2 is formed in a connection hole formed in the first interlayer insulating film 2. Then, a first conductor film stacked on the entire face of the substrate at a low coating rate is patterned, and a first wiring 4 is formed. Since a deep recessed part is formed on the first wiring, the contact area of the recessed part and a second embedded plug 6 becomes considerably larger than the cross sectional area of the connection hole, when the second embedded plug 6 which is the next layer is formed on the recessed part. Thus, the change of connection resistance with respect the dispersion of the diameter of the connection hole is relieved. Namely, the semiconductor device whose opening area dependence is small and has stable connection resistance is provided. |
