发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To transfer an excellent pattern within the focal depth of a projection lens, by exposing a transferring mask having a diffraction type lens to a light. SOLUTION: When an illumination light 400 of an illumination optical system 4 enters mask 5, an aperture pattern 51 is drawn in a position corresponding to a cell part 31, and a diffraction type lens pattern 52 is drawn in a position corresponding to a peripheral circuit part 32 in a mask 5. A light 410 outputted from the aperture pattern 51 forms its image in a contact hole 310 on the cell 31 via projection lenses 2. A light 420 outputted from the diffraction type lens 52 once forms an image at an imagery point A below the mask 5, and the imagery point A is formed in a contact hole 320 on the peripheral circuit 32. The distance (f) between the imagery point A and the mask 5 is determined in accordance with the step-difference Z between the cell 31 and the peripheral circuit 32. Letting the projection magnification of the projection lenses 2 be M, the relation between (f) and Z is given by f=Z/M. The focal length of the diffraction type lens 52 is so designed that it becomes equal to the distance (f).
申请公布号 JPH1154399(A) 申请公布日期 1999.02.26
申请号 JP19970205765 申请日期 1997.07.31
申请人 HITACHI LTD 发明人 YOSHITAKE YASUHIRO;SHIBA MASATAKA;OSHIDA YOSHITADA
分类号 G03F1/38;G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/38
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