| 摘要 |
<p>PROBLEM TO BE SOLVED: To execute the correction of the defect arising on a substrate having circuit patterns with high accuracy by executing the correction of the defect while changing a parameter to detenrtine the correction quantity of the defect by the three-dimensional shape distribution or refractive index distribution of the defect. SOLUTION: The defect is detected by a defect inspection apparatus or foreign matter inspection apparatus 901 and the result of the detection (for example, coordinate data, stage coordinate) 903 is delivered. A defect phase difference quaintly (the three-dimensional shape or distribution the refractive index of the defect) is measured by a measuring instrument 902 for the defect phase difference quantity. The resulted defect shape data 904 is sent to a defect correction apparatus 905. The defect correction apparatus 905 executes the correction of the defect while changing the parameter determining the correction quantity of the defect by the defect shape data 904. A processing device using a charge particle beam, such as FIB(focusing ion beam) or EB(electron beam) is used as the defect correction apparatus 905.</p> |
