| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a metal wiring structure and its forming method. SOLUTION: A seed layer 600, wherein an aluminum Al layer is used, is formed on an insulating layer 210. Then, a titanium Ti layer and a humidity layer 700 as a titanium TiN layer or its combination layer are formed on the seed layer, and a metal wiring layer 800 is formed on the humidity layer as an aluminum layer or an aluminum alloy layer. At this point, the operation of forming the seed layer, the humidity layer and the metal wiring layer is performed by in-situ without vacuum extinction. As a result, the metal wiring layer grows in a specific crystallographic direction by the seed layer, and it preferentially has the specific crystallographic orientation. Also, the dimension analysis of the surface of the metal wiring layer can be improved.</p> |
