| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which efficiently dissipates heat generated at the time of its operation and, as the result, its life is prolonged. SOLUTION: An n-type GaN layer 103 which is used as a first conductivity type semiconductor layer, an n-type AlGaN clad layer 104, an InGaN active layer 105 which is a luminous layer, a p-type AlGaN clad layer 106 which is used as a second conductivity type semiconductor layer, and a p-type GaN layer 107, are formed on a substrate 101. Thereafter, a striped region having the first conductivity type semiconductor layer, the second conductivity type semiconductor layer and the luminous layer is formed. Here, by forming the width of a layer wider, which is formed with the luminous layer, than a width of 50μm, the diffusion of heat generated at the time of the operation of a semiconductor light-receiving element takes place efficiently, and the life of the semiconductor light-emitting element is prolonged.
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