| 摘要 |
PROBLEM TO BE SOLVED: To improve the photoelectric conversion efficiency of a photovoltaic element by providing a first pin junction containing microcrystalline silicon carbide (hereinafter called microcrystalline SiC) as the main component of an i-type semiconductor layer on the incident side of a second pin junction containing microcrystalline silicon as the main component of another i-type semiconductor layer. SOLUTION: For example, a stacked photovoltaic element has such a structure that two pin junctions are laminated upon another and the first pin junction 112 from the incident side has an i-type semiconductor layer containing microcrystalline SiC as a main component, and then, the second pin junction 113 has an i-type semiconductor layer containing microcrystalline silicon as a main component. When the photovoltaic element is constituted in such a way, the band gap of the i-type semiconductor layer is expanded and the built-in potential of the pin junction is increased, because the i-type semiconductor contains microcrystalline SiC as a main component. Therefore, the photoelectric conversion efficiency of the photovoltaic element can be improved, because the open-circuit voltage (Voc ) of the element is improved and, at the same time, short-wavelength light can be utilized effectively. |
