发明名称 SEMICONDUCTOR PHOTO HOLE BURNING MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor photo hole burning memory which causes no difficulty in writing dots when writing many dots. SOLUTION: A device has a fundamental structure constituted of first quantum dot sections 11 and second quantum dot sections 12 which are stacked through barrier layers 13. The first quantum dot sections 11 include only first quantum dots 11D holding electrons out of pairs of an electron and a hole generated by incident light hνand the second quantum dot sections 12 include only second quantum dots 12D holding holes, out of the pairs of an electron and a hole, tunneled through the barrier layers 13.
申请公布号 JPH1154715(A) 申请公布日期 1999.02.26
申请号 JP19970211665 申请日期 1997.08.06
申请人 FUJITSU LTD 发明人 HORIGUCHI NAOTO
分类号 H01L29/06;H01L27/10;H01L29/66;(IPC1-7):H01L27/10 主分类号 H01L29/06
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