| 摘要 |
PROBLEM TO BE SOLVED: To increase the specific inductive capacity of a dielectric thin film, even in a high-frequency domain by constituting the thin film, so that the film shows a large inductive capacity even through a DC bias is impressed upon the film and making the temperature changing rate of the capacitance of the thin film smaller. SOLUTION: A dielectric thin film is composed of a perovskite-type composite oxide, containing Pb, Mg, Nb, and Ni as metallic element and has a thickness of 2 μm or less. When the composition of the metallic element oxides by mol ratio is expressed as (1-x-y)Pb3 (Mgb/3 Nb2/3 )O3 .xPba ZrO3 .yPba (Nib/3 Nb2/3 )O3 , the x, y, a and b are made to satisfy 0<=x<=0.30, 0<y<=0.20, 1<=a<=1.10, and 1<=b<=1.15. |
