发明名称 MANUFACTURE OF THIN FILM DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent erosion of a Cr film pattern due no static electricity and improve the yield of manufacture of a thin film device, by eliminating electricity with an ionizer and cleaning with a conductive solution before pure-water cleaning, in a step of water-cleaning each part of a multilayered wiring film on an insulating substrate on which the Cr film pattern is formed. SOLUTION: Disconnection due to erosion of a Cr wiring pattern caused by a Cr black point is caused by a pin hole, a crack or the like of an insulating film due to a dust particle on an insulating substrate at the time of continuous formation of a multilayered wiring film. Since most of the causes are attachment of a fine dust particle or the like, cleaning with a conductive solution, or cleaning with a conductive solution after elimination of electricity with an X-ray ionizer is carried out in advance in a step of water-cleaning an insulating substrate having a multilayered wiring insulating film formed thereon and having a Cr film. Specificaly, before pure-water cleaning at the time of water cleaning of the insulating substrate before photoresist coating, cleaning is carried out with a carbonic acid solution generated by dissolving carbonic acid gas by bubbling and having a specific resistance of 0.36 to 0.43 MΩ.
申请公布号 JPH1154465(A) 申请公布日期 1999.02.26
申请号 JP19970213428 申请日期 1997.08.07
申请人 FUJITSU LTD 发明人 NAGAOKA KENICHI;NASU YASUHIRO;OZAKI KIYOSHI;DEJIMA YOSHIO
分类号 H01L21/306;H01L21/304;H01L21/336;H01L29/786;(IPC1-7):H01L21/304 主分类号 H01L21/306
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