| 摘要 |
PROBLEM TO BE SOLVED: To easily realize high level integration of an integrated circuit device, by constituting a buffer film which consists of a metal oxide film stabilized by a lower temperature treatment at a temperature equal to or lower than a specified temperature, is formed between a film containing a ferroelectric film and an insulating film, and prevents mutual action between both the films. SOLUTION: A contact hole which is formed in an interlayer insulating film 110 and exposes an impurity region 108 of a substrate 100 is filled with a polycrystalline silicon film, and a contact plug 112 is formed. A first buffer film pattern 114, a lower electrode pattern 116, a ferroelectric film pattern 118 of high permittivity and an upper electrode pattern 120 are formed in this order on the interlayer insulating film 110 in which the contact plug 112 is formed, and a capacitor is constituted. A second buffer film 122 is formed on the whole surface of the completed capacitor, and an insulating film 124 is formed on the second buffer film 122. It is constituted of a metal oxide film which is stabilized by low temperature treatment at a temperature equal to or lower than 600 deg.C. Thereby high level integration of an integrated circuit device is easily enabled. |
