| 摘要 |
PROBLEM TO BE SOLVED: To provide a material and a method for forming a mask by which problem such as upsizing, deformation and diffraction of charged particles in a specified direction can be solved. SOLUTION: An etching inhibit layer 2 against silicon etching is formed on the surface of a silicon substrate. A silicon thin layer 3 is formed on the etching inhibit layer 2. An etching mask pattern 4 provided with openings, corresponding to the position of small areas, is formed on the reverse side of the Si substrate. Through the use of the etching mask pattern 4, the reverse side of the silicon substrate is etched vertically or approximately vertically to form multiple columns having walls which are perpendicular or approximately perpendicular to the etching inhibit layer 2, in correspondence with the position of border regions and to form openings 5 between columns corresponding to the position of the small regions. The etching inhibit layer 2 exposing through the openings 5 is removed so as to expose a membrane of silicon thin layer through the openings 5. |
