SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device, capable of operating at high temperatures and maintaining desired durability and data-storing performance. SOLUTION: An integrated circuit 10 is formed on a semiconductor substrate 20. A nonvolatile memory device 12 and a semiconductor device 11 are included in the circuit 10. The device 12 includes a dielectric layer 15 having a nitride compound. Further, the device 12 includes a silicon dioxide layer 33, but the layer 33 is also used to from a part of the device 11.