| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily attract a wafer from a wafer stage without a trouble caused by a residual electric charge by demounting the wafer while applying ultrasonic waves to the wafer stage. SOLUTION: A wafer W is placed on the dielectric of a wafer stage 1, and a DC power supply 16 is turned on the apply a DC voltage to a temperature conditioning jacket, and the wafer is fixed on the dielectric 3 by the electrostatic attraction produced by the dielectric 3. Then, after the wafer is processed, when the wafer W is demounted from the wafer stage 1 through the demount of the wafer W from an electrostatic chuck mechanism 5, the DC voltage application for the electrostatic chuck mechanism 5 is stopped, and ultrasonic waves are applied by an ultrasonic vibrator 4 to wafer stage 1 while applying the charge neutralizing plasma on the wafer stage 1 in that state, and the wafer W is demounted from the wafer stage 1. Thus, the wafer is easily demounted from the wafer stage.</p> |
