| 摘要 |
PROBLEM TO BE SOLVED: To obtain an image pickup device which performs multilayer wiring, is also miniaturized, also has a stable operation and a high S/N and does not have so much unnecessary radiation by using a semiconductor substrate instead of a glass epoxy substrate. SOLUTION: Wiring 15 and 16 which are constituted of a metallic layer are formed and also a solid-state image pickup device chip 12 and a drive device chip 13 are mounted on a semiconductor substrate 11. A pad 14 is connected to the chips 12 and 13 through a metallic wire. The wiring 15 and 16 performs wiring between pads of the chips 12 and 13 and to a pad 17, and the wiring 15 is formed by a 1st metallic layer and the wiring 16 is formed by a 2nd metallic layer. The pad is connected by a package lead terminal and a metallic wire. Then, the width of the wiring 15 and 16 can be made as thin as about 1μm, a wiring area is made small, and therefore, it is possible to miniaturize an image pickup device. Also, a coupling capacity becomes small due to the reduction of the wiring area, and a stable operation of the image pickup device and a high SIN are accomplished.
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