Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische Felder

摘要

An integrated device presenting a structure for protection against electric fields. The protection structure is formed by a first region of conducting material (34) connected electrically to the gate/source region (6) of the device and at a first potential, and by a second region of conducting material (35) connected electrically to the drain region (15) of the device and at a second potential differing from the first. The first region of conducting material (34) is comb-shaped, and presents a first number of fingers (32) separated by a number of gaps; and the second region of conducting material (35) presents portions (33) extending at the aforementioned number of gaps and also forming a comb structure, so that the body of semiconductor material (1) of the device sees a protection region formed by a pair of interlocking comb structures and at an intermediate potential between the first and second potentials.