| 摘要 |
A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer (12) at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, Pt, Cu, AG, Au, In, Sn, Pb, P, As, and Sb. The crystallization promoting material is introduced by mixing it within a liquid precursor material for forming silicon oxide (13) and coating the precursor material onto the amorphous silicon film (12). <IMAGE> |
