Method of manufacturing CMOS semiconductor devices by forming a salicide structure

摘要

A manufacturing method of simplifying the process and permitting SAC and the salicide technique by effecting the salicide process without removing a cap portion is provided. A manufacturing method of this invention includes a step of exposing part of the side surface of a gate electrode by effecting the anisotropic etching process in an over-etching fashion at the time of formation of side walls and converting a electrode material used as the gate electrode into silicide from the side surface of the exposed gate electrode.