| 摘要 |
An ECR type plasma processing apparatus including an airtight processing chamber and a work table for supporting a semiconductor wafer thereon disposed in the processing chamber. The interior of the processing chamber is exhausted to a vacuum by an exhaust system and an active gas such as CF4 gas and an inert gas such as Ar gas are supplied into the processing chamber through nozzles. Further, a magnet is disposed around the processing chamber to generate a magnetic field perpendicular to the upper surface of the wafer and a microwave transmitting window is disposed in the ceiling of the processing chamber. Also, a microwave generated by a microwave generator is introduced into the transmitting window through a rectangular waveguide, a mode converter, and a tapered waveguide. The microwave is transmitted through the rectangular waveguide in the TE10 mode, is converted into a hybrid wave of two mode waves, i.e., a TM01-mode wave and a TE11-mode wave, by the mode converter, and is transmitted to the tapered waveguide.
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