摘要 |
When forming a conductor film of Ag, Au, Cu, Al on a substrate of ceramics or glass, an adhesive layer of Cr, NiCr is formed on the substrate, a mixed layer of adhesive layer material and conductor film material is formed on the adhesive layer, and a conductor film is formed on the mixed layer. According to this method, even if film forming is conducted below the temperature for inducing diffusion on the interface of the conductor film and adhesive layer, for example, below 100 DEG C., an alloy layer of adhesive layer material and conductor film material is present on the interface of the adhesive layer and conductor film to be closer to bulk state, and the attraction between molecules is increased, so that the bonding strength of the conductor film and adhesive layer is enhanced. Therefore, at 100 DEG C. or more, a conductor film which hardly causes peeling may be formed on the substrate to be used in electronic components which vary in electric characteristics or on the film form substrate which deforms thermally.
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申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OKUDA, AKIRA;SHIBASAKI, HATSUHIKO;MARUYAMA, KENJI;TANINO, TAKASHI;KOBAYASHI, YASUHIRO |