| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for formation of a poly-Si film capable of forming a silicon film front a liquid higher order silane easily at a low cost and temp. without using substances, such as Ni, which can be impurities at the time of forming the silicon film described above. SOLUTION: A liquid mixture composed of the liquid higher order silane having lower explosiveness and ignitability and an alkoxysilane or an alkoxysiloxane having the vapor pressure lower than the vapor pressure thereof is used as a common raw material in the production of silicon particles and the formation of the silicon film. This liquid mixture is applied on a substrate 9 by a spin coater 8 and is pressurized to a gage pressure of >=50 kPa, by which the silicon particles are obtd. from part of the raw material. Further, the polycrystalline silicon film is obtd. by heating up the raw material to evaporate the residual alkoxysilane or the residual alkoxysilane and further polymerizing the higher order silane with the silicon particles obtd. by the method described above as nuclei by heating. |
