发明名称 |
Ferroelectric semiconductor device and method of manufacture |
摘要 |
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (13) of ferroelectric material disposed on a semiconductor substrate (11) and a gate electrode (17) formed on a portion (26) of the layer (13) of ferroelectric material. The portion (26) of the layer (13) of ferroelectric material sandwiched between a semiconductor substrate (11) and a gate electrode (17) retains its ferroelectric activity. The portions (21, 22) of the layer (13) of ferroelectric material adjacent the portion (26) are damaged and thereby rendered ferroelectrically inactive. A source contact (31) and a drain contact (32) are formed through the damaged portions (21, 22) of the layer (13) of ferroelectric material.
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申请公布号 |
US5874755(A) |
申请公布日期 |
1999.02.23 |
申请号 |
US19960743768 |
申请日期 |
1996.11.07 |
申请人 |
MOTOROLA, INC. |
发明人 |
OOMS, WILLIAM J.;HALLMARK, JERALD A.;MARSHALL, DANIEL S. |
分类号 |
H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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