Apparatus and method for determining the temperature of a radiating surface

摘要

The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. Through this method, the emissivity of the wafer has only a minor influence on the calculated temperature.