发明名称 |
Sputtered metal silicide film stress control by grain boundary stuffing |
摘要 |
A method of controlling stresses in thin films that are deposited over semiconductor device substrates. During anneal process steps, grain growth of the film creates stresses in that can damage or destroy it. The stresses lead to warping and bowing and ultimately to film cracking which undermines desired low resistivity. The present invention imparts thermal stability to thin films by grain boundary stuffing (GBS) of preselected elements that resist film grain changes that cause the stresses. GBS implants the elements into the thin film at desired depths, but above the film-substrate interface, sufficient to prevent or lessen destructive grain growth. GBS provides for structural film stability required during severe thermal cycles that occur during subsequent processing of semiconductor devices.
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申请公布号 |
US5874351(A) |
申请公布日期 |
1999.02.23 |
申请号 |
US19960663551 |
申请日期 |
1996.06.13 |
申请人 |
MICRON TECNOLOGY, INC. |
发明人 |
HU, YONG-JUN;PAN, PAI HUNG |
分类号 |
C23C14/06;C23C14/58;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L21/42 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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