Magnetoresistance effect element and magnetoresistance device

摘要

A magnetoresistance effect element according to the present invention comprises magnetic multilayer film having a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and a pinning layer which is formed on the ferromagnetic layer to pin a direction of magnetization of the ferromagnetic layer, wherein the ferromagnetic layer and the pinning layer are coupled to each other with epitaxial growth.