发明名称 |
VAPOR-PHASE EPITAXIAL GROWTH METHOD |
摘要 |
A vapor-phase epitaxial growth method for producing a Groups III-V compound semiconductor containing arsenic by vapor-phase epitaxial growth using arsenic trihydride as an arsenic source is disclosed, wherein said arsenic trihydride has a volatile impurity concentration of not more than 1.5 molppb on a germanium tetrahydride conversion. The resulting epitaxial crystal has a low residual carrier concentration and is applicable to a field effect transistor.
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申请公布号 |
CA2008946(C) |
申请公布日期 |
1999.02.23 |
申请号 |
CA19902008946 |
申请日期 |
1990.01.30 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
MAEDA, TAKAYOSHI;WATANABE, TAKESHI;HATA, MASAHIKO;FUKUHARA, NOBORU |
分类号 |
C30B25/02;H01L21/205;(IPC1-7):C30B25/02;C30B29/40 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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