High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same

摘要

PCT No. PCT/US96/01724 Sec. 371 Date Nov. 24, 1997 Sec. 102(e) Date Nov. 24, 1997 PCT Filed Feb. 5, 1996 PCT Pub. No. WO96/24167 PCT Pub. Date Aug. 8, 1996A green-blue to ultraviolet light emitting semiconductor laser having a top contact, a Bragg reflector, cladding layer, active layer, cladding layer, buffer, substrate, bottom contact and a passivation layer. The key aspect is a Ga*N material on a base structure comprising a SiC substrate selected from a group consisting of 2H-SiC, 4H-SiC and a-axis oriented 6H-SiC. Furthermore, the cladding layers have larger band gaps than the active layer and are complimentarily doped.