MOS-technology power device and process of making same

摘要

A MOS-technology power device including a semiconductor material layer of a first conductivity type having a body region disposed therein. The body region includes a heavily doped region of a second conductivity type, a lightly doped region of the second conductivity type and a heavily doped region of the first conductivity type and a process of making same. A method of making the semiconductor device includes forming an insulated gate layer on portions of the surface of the semiconductor material layer to leave selected portions of the semiconductor material layer exposed. Ions of the second conductivity type are implanted into the selected regions of the semiconductor material layer. The implanted ions are thermally diffused to form body regions, each body region including a heavily doped region substantially aligned with the edges of the insulated gate layer, and a lightly doped region formed by lateral diffusion of the first dopant under the insulated gate layer. Ions of the first conductivity type are then implanted into the heavily doped regions to form source regions substantially aligned with the edges of the insulated gate layer.