发明名称 Repairable memory module and method of repairing memory modules
摘要 A repairable memory module, such as a DRAM (dynamic random access memory) or a flash memory module, and a method of repairing memory modules are proposed. Based on the repairable memory module, any failed memory ICs in the module that are found before shipment or after use can be repaired through the use of a backup memory IC. Fundamentally, when any failed memory ICs are found in the module, a set of zero-ohm resistors are used to short-circuit a number of selected pairs of jumping pads to thereby redirect the connections to the I/O (input/output) and column-address strobe pins on the failed memory IC instead to the same nominal pins on the backup memory IC. This allows the function of the failed ICs to be instead performed by the backup memory chip.
申请公布号 US5875136(A) 申请公布日期 1999.02.23
申请号 US19970907642 申请日期 1997.08.11
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 HSUAN, MIN-CHIH;JAW, JERRY;HAN, CHARLIE
分类号 G11C5/06;(IPC1-7):G11C5/06 主分类号 G11C5/06
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