Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition,申请号SG19970003673-传众专利搜索

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发明名称	Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition
摘要
申请公布号	SG60123(A1)	申请公布日期	1999.02.22
申请号	SG19970003673	申请日期	1997.10.06
申请人	APPLIED MATERIALS, INC.	发明人	FORSTER, JOHN, C.;STIMSON, BRADLEY, O.;XU ZEHNG;EDELSTEIN SERGIO;SUBRAMANI MANI
分类号	H05H1/46;C23C14/34;H01J37/32;H01J37/34;H01L21/203;H01L21/285;(IPC1-7):H01J37/34	主分类号	H05H1/46
代理机构		代理人
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