Verfahren zur Herstellung von integrierten MOS-Schaltungen

摘要

In a process for manufacturing MOS circuits, a PBL (polysilicon-buffered-LOCOS) process is simplified in that the pad oxide (3) precipitated during the PBL process is used as gate oxide. In addition, the polysilicon layer (4) precipitated during the PBL process is used as part of the gate polysilicon.