发明名称 |
METHOD FOR MAKING A THIN FILM OF SOLID MATERIAL |
摘要 |
<p>The invention concerns a method for making a thin film of solid material, comprising the following steps: a step of ion implantation through a surface of said solid material substrate by means of ions capable of producing, in the substrate volume and at a depth close to the mean penetration of the ions, a layer of microcavities or microbubbles, said step being carried out at a predetermined temperature and for a predetermined duration; an annealing step for bringing the layer of microcavities or microbubbles to a predetermined temperature and for a predetermined duration to obtain a cleavage on either side of the layer of microcavities or microbubbles. The annealing step is carried out with a predetermined thermal budget, based on the thermal budget of the ion implantation step and optionally on other thermal budgets induced by other steps, to obtain said cleavage of the substrate.</p> |
申请公布号 |
WO9908316(A1) |
申请公布日期 |
1999.02.18 |
申请号 |
WO1998FR01789 |
申请日期 |
1998.08.11 |
申请人 |
COMMISSARIAT A L&apos,ENERGIE ATOMIQUE;ASPAR, BERNARD;BRUEL, MICHEL |
发明人 |
ASPAR, BERNARD;BRUEL, MICHEL |
分类号 |
H01L21/265;H01L21/762;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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