| 摘要 |
PROBLEM TO BE SOLVED: To raise the degree of integration, by making the thickness of the gate insulating film corresponding to the border section with the gate electrode of a MOS transistor separated in trench type larger than the thickness of the gate insulating film corresponding to the border section with the gate electrode of the MOS transistor that the information processor has. SOLUTION: A semiconductor integrated circuit device has, as an information storage part 42, a DRAM cell having a MOS-type transistor separated in trench type, and is further equipped with an information processor 40 in addition. Then, the thickness of the gate insulating film 39 corresponding to the border section with the gate electrode of a diffusion layer, to serve as the source or the drain of the MOS transistor that the information processor 42 has, made larger than the thickness of the gate insulating film corresponding to the border section with the gate electrode of an impurity diffused layer, to serve as the source or drain of the MOS-type transistor that the information processor 40 has. As a result, high degree of integration by trench type separation can be secured. |
