| 摘要 |
PROBLEM TO BE SOLVED: To uniformly press and contact a semiconductor element to ensure a good cooling efficiency, thereby stabilizing the electric characteristics of the element, by adjusting in specified range the surface hardness of a contact surface i.e., one main surface of a first cooling block to be pressed and contacted to a main surface of an outer main electrode of the semiconductor element. SOLUTION: A cover block 2A is bonded to one main surface of a main block having on the opposite main surface a contact surface PS3 to be contacted to a semiconductor element 11. This surface PS3 has a rectangular recess and surface hardness HV=70-90 in Vickers hardness provided by the pressure forming process. If an external pressure of 10-150 kgf/cm<2> is applied to hold the semiconductor element cooling device 10A contacted to outer electrodes 12, the contact surface PS3 can be prevented from deformation and hence no relief pattern can be formed at the contact surfaces PS3, PS2 of the outer electrodes 12 and cooling device 10A. |
