| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformly of a near-field pattern by a method, wherein a primary diffraction grating is provided on each side of the current injection strips region of an active layer which extends in the surface of the active layer and vertical to the lengthwise direction of a resonator. SOLUTION: In a semiconductor laser device, a primary diffraction grating 19 is provided on each side of a current injection stripe region in a GaAs active layer 3, extending in the surface of the active layer 13 and vertical to the lengthwise direction(direction vertical to both cleavage plates) of a resonator. The primary diffraction grating 19 is formed so as to reduce an angleπof incidence at which light traveling towards the sides of the stripe-like current injection region of the GaAs active layer 13 is totally reflected. Therefore, a lateral mode on each side of the stripe-like current injection region is turned to a higher order by the firstorder diffraction grating 19. Through this setup, a lateral mode of high order can be positively used, and the semiconductor laser device is capable of obtaining a uniform near-field pattern and enhanced in output.
|
