| 摘要 |
PROBLEM TO BE SOLVED: To improve the method for forming the electrode of a capacitor used for DRAMs. SOLUTION: A first nitride film 15 is formed on a semiconductor substrate 11, a lower electrode 12 of a capacitor is formed on it, a ferroelectric film 13 is formed on top of it, an upper electrode 14 of the capacitor is formed on top of it, an oxide film 16 is formed on top of it, and a second nitride film 17 is formed on top of it. Oxygen ions are implanted into the ferroelectric film 13 by the ion implantation method via the second nitride film 17 and the oxide film 16. |
