| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT which is high in productivity and low in ion resistance. SOLUTION: A groove T1 where a gate electrode 9 is housed is extended in a direction at right angles (lateral direction in the figure) with the longer directions of a collector layer 5 and a buffer layer 4, or in the direction in which a current flows. Therefore, electrons traveling towards the collector layer 5 via an emitter layer 10, an inverted channel region CH, and a drift layer 3 are not stopped from flowing by the groove T1 . Therefore, even if the groove T1 and a groove T2 electrically isolated from the groove T1 are formed at the same depth through the same etching, the flow of electrons is not adversely affected. Although the holes and electrons move on the surface and base of the drift layer 3 respectively, holes are stopped from flowing by a groove T3 . Through this setup, holes and electrons flow through paths, overlapping with each other, and holes are accumulated on the sidewall of the groove T3 on a collector layer 5 side. As a result, conductivity modulation is promoted. |
