| 摘要 |
PROBLEM TO BE SOLVED: To remove the leakage current from an electrode opposed to a gate electrode, by so forming a nitride film as to cover the section opposite to an ohmic electrode out of the surface of the gate electrode, between the surface of a sidewall insulating film and the wall face on the gate electrode side. SOLUTION: An active region which is demarcated with a field oxide film 22A and covers a thermal oxide film 22B is made on an Si substrate 21. On the active region, a word line WL is extended on the thermal oxide film 22B, and the gate electrode 23 of a memory cell transistor is made. With the gate electrode 23 as a mask, ion implantation is performed to form diffused regions 21A and 218 on both sides of the gate electrode 23 within the substrate 1. Next, a nitride film 24 is made to cover the section opposed to an ohmic electrode out of the gate electrode 23, between the topside of the gate electrode 23 and the sidewall face and sidewall insulating films 25A and 25B. As a result, the leakage current from the electrode opposed to the gate electrode 23 can be removed. |
