| 摘要 |
PROBLEM TO BE SOLVED: To simply form a capacitor where the capacity as increased sharply, by forming a silicon film of thickness with a specified range on an insulating film, thereby obtaining an electrode under the capacitor by chemical vapor deposition method. SOLUTION: A CVD silicon oxide film not containing impurities, that is, an NSG film is made as an insulating film 11 on the surface of a substrate, and the surface of the insulating film 11 is cleaned with persulfuric acid water. Then, the lower electrode 12 of a capacitor is made by forming a silicon film 110 nm-150 nm thick on the insulating film 11, by LP-CVD method which uses material gas including saline gas consisting of monosilane, disilane, or the like, and also which is performed at the temperature in the transition region where silicon turns from amorphous into crystal condition. As a result, the capacitor whose capacity has increased sharply can be made easily. |
