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发明名称
Halbleiterdiode, insbesondere Schaltdiode, mit einem Halbleiterkoerper aus vier Schichten abwechselnd entgegengesetzten Leitfaehigkeitstyps
摘要
申请公布号
DE1080692(B)
申请公布日期
1960.04.28
申请号
DE1957I012673
申请日期
1957.01.08
申请人
INTERNATIONAL STANDARD ELECTRIC CORPORATION
发明人
GOBAT ANDRE R.
分类号
H01L29/00
主分类号
H01L29/00
代理机构
代理人
主权项
地址
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