| 摘要 |
PROBLEM TO BE SOLVED: To enable a gallium nitride semiconductor layer of high quality to be grown stably on a substrate by a method, wherein the stress caused by thermal expansion coefficient difference between those of the gallium nitride semiconductor layer and the substrate is relaxed with a buffer layer. SOLUTION: A semiconductor device 10 is formed through a method in which a first buffer layer 12, a second buffer layer 13, a buffer layer 14, and a gallium nitride semiconductor layer 15 are successively deposited on a silicon substrate 11. The buffer layer 14 is formed of a gallium nitride semiconductor, which contains indium so as to relax the stresses due to thermal expansion coefficient difference between those of the silicon substrate 11 and the gallium nitride semiconductor layer 15 and is set as thick as a monoatomic layer or larger. Through this setup, a substrate is kept free from warpage or cracking, so that a gallium nitride semiconductor layer 15 of high quality can be grown stably. |
