| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the optimum exposing condition can be decided without breaking a substrate for evaluation. SOLUTION: A photoresist is applied to the surface of a wafer W for inspection and exposed by slightly changing exposing conditions, such as the exposure, defocusing amount, etc., at every shot area on the wafer W and, after development, the wafer W is placed on the turntable 38 of an inspection device. Then, a detecting light from a light source 21 is nearly perpendicularly projected upon the whole surface of the waver W, and the intensities of regular reflected light and±n-order diffracted light at each shot area on the wafer are found by picking up the image of the regular reflected light from the wafer W, by means of an image pickup element 26 and the image of the±n-order diffracted light from the wafer W by means of image pickup elements 30a and 30b and processing the picture signals. By finding the relation between the cross-sectional shape of the resist pattern and the quantities of the regularly reflected light and diffracted light in advance, the shot area at which the optimum cross-sectional shape is obtained is specified by using the relation and the light quantities measured from each shot area, and the exposing condition set to the shot area is decided as the optimum exposing condition.
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