| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN crystal-growing substrate which is capable of manufacturing a high-quality GaN crystal substrate that is thick and hardly contains defects such as dislocations and the like, and a method of manufacturing a GaN crystal substrate by use thereof. SOLUTION: A mask layer 2 is partially provided onto a front 1a of a base substrate 1 to partition it into a masked region 12 and a non-masked region 11. The mask layer is formed of a material such that no GaN crystal grows substantially from the surface of the layer. A breakage inducing part 1c, which causes cracking to the base substrate 1 when warpage is about to be generated, is provided to the other surface (rear) 1b. The breakage inducing part 1c is formed so as to bring about a cracking start point and moreover to make the cracking reach the masked region 12. |
