| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a stable production stage and to efficiently obtain a semiconductor device by forming all the other outer peripheral part exclusive of part of the outer peripheral part precluding the chip pattern region of a glass mask as a light shielding part which does not allow the transmission of light so that a high concn. boron layer is not formed on the outer peripheral part of a semiconductor substrate at the time of the first masking. SOLUTION: The chip pattern region 14 is formed in the central part of the glass mask 15 like heretofore. The part precluding the photosensitive part 16A of an orientation flat part at the circumference of the chip pattern region 14 is formed as the light shielding part (non-photosensitive part) 17 in all the part of the glass mask 7 shown by hatching. An oxidized film, therefore, remains via a positive resist in the outer peripheral part of the semiconductor substrate exclusive of the orientation flat part when a prescribed treatment is executed. As a result, the boron diffusion to the outer peripheral part of the semiconductor substrate is suppressed at the time of the selective diffusion of the boron in a later stage and the boron damage is lessened. The production stage is stabilized in the final.</p> |
