| 摘要 |
PROBLEM TO BE SOLVED: To reduce the electric characteristic deterioration of a memory cell, by forming a first Ta layer, lower electrode, ferroelectric layer, upper electrode and second Ta layer having openings in an insulation layer, and providing an upper and lower wirings through the openings of the second Ta layer. SOLUTION: In an Si oxide insulation layer 1 are formed a first Ta adhesive layer 2, lower electrode 3, ferroelectric layer 4, upper electrode 5 and second H-occlusion Ta layer 6 having openings. An upper wiring 7 for a capacitor is directly connected to the upper electrode 5 through the opening of the layer 6 and led out upwards, and lower wiring 8 is directly connected to the lower electrode 3 and led out upwards. This reduces the electric characteristic deterioration of the ferroelectric memory due to reaction of hydrogen and oxygen in the oxide film. |
