METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an HSG(hemispherically grained silicon)-Si with improved reproducibility on a capacitor electrode. SOLUTION: A method allows dilute fluoric acid treatment to be performed to a semiconductor substrate 15 and allows it to be moved to a next process. Then, a process for forming HSG-Si is included and the amount of organic matter being adhered to the surface of the semiconductor substrate 15 in the process for moving the semiconductor substrate 15 is maintained at 1 ng/cm<2> or less, thus forming HSG-Si with improved reproducibility.