| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting device which is high in reliability and equipped with a built-in overvoltage protective element that functions as both a protective circuit and a resin drip pan. SOLUTION: An Si diode element 2 is die-bonded onto the tip of a lead frame 13a, making its n electrode 9 on its underside come into contact with the lead frame 13a. A GaN-LED element 1 is provided above the Si diode element 2, making its sapphire board facing upward and electrically connecting its p electrode 5 and n electrode 6 to the n electrode 8 and p electrode 7 of the Si diode element 2 respectively via Au micro bumps 11. Furthermore, the p-electrode bonding pad 10 of the Si diode element 2 is electrically connected to a lead frame 13b with an Au wire. A first resin 16, which contains fluorescent material 17 to convert the wavelength of the emitted light of the GaN-LED element 1 into another, is applied to cover the GaN-LED element 1, making the Si diode element 2 serve as a drip pan. With this setup, a light-emitting device of high reliability can be obtained. |
