| 摘要 |
PROBLEM TO BE SOLVED: To reduce the concentration of a catalytic element to an extent having no influence on the characteristics by doping an insulating film as a mask with the catalytic element, carrying out heat treatment to metamorphose it into a crystalline silicic acid film, doping it with an element selected from 15 group, carrying out heat treatment to effect gettering of the catalytic element, and removing only the region doped with the element. SOLUTION: Nickel is used as a catalytic element, and phosphorus is used as an element for gettering. An insulating mask film 104 is patterned, an opening part 110 is provided in the region doped with nickel subsequently (a), and nickel acetate salt solution containing nickel is dropped to form a thin nickel containing layer 111 (b). Then, the insulating mask film 104 utilized in the nickel adding process is reused as it is and doped with P ions for the gettering process, and it is subjected to heating treatment in the nitrogen atmosphere at 500-700 deg.C (typically 600 deg.C) for 2-4 Hr. Thus, the residual nickel in the lateral growth region 121 is moved toward the phosphorus doped region 130 to lower the nickel concentration. |
