| 摘要 |
The invention concerns a method for producing a connection between the top part and the bottom part of a microelectronic structure (22, 24, 26), comprising the following steps: carrying out an anistropic etching of the structure to obtain a via (30) with substantially parallel walls; depositing an organic insulant (32) under vacuum on the via walls and on the structure bottom and top surfaces; producing at least one contact (34) cut by etching the insulant; depositing a conducting coat (36) on the structure and on the via walls. |
