CMOS-Schaltung und Verfahren zu ihrer Herstellung

摘要

The invention relates to an integrated CMOS circuit, comprising a silicon substrate (1), a dielectric layer, an additional silicon layer (2) and MOS transistors having a source, a gate with gate dielectric (3b) and a drain. The gate dielectric (3b) contains nitrogen or a nitrogen compound. The nitrogen and/or the nitrogen compound prevents lateral oxidation between the silicon layers (1, 2) in the edge areas of the gate dielectric (3b).