III-V semiconductor production by MOVPE

摘要

In the metal-organic gas phase epitaxy (MOVPE) of a III-V semiconductor having the formula InxGayAlzN (where x + y + z = 1 and x, y and z are each 0-1) and comprising a layer which is not p-doped and a layer which contains a p-type dopant, a first reactor is used for growing the layer which is not p-doped and a second reactor is used for p-doping. Also claimed is a similar process comprising (a) using a reactor to grow a semiconductor consisting of one or more layers, which are not p-doped, and removing the semiconductor from the reactor; (b) re-introducing the semiconductor into the reactor for growing an overlying p-doped layer; and (c) repeating one or both of the steps (a) and (b), preferably after cleaning the reactor interior.